Since its inception, the power conversion efficiency (PCE) of edge-emitting laser (EEL) technology has been continuously breaking records, achieving a historically high efficiency of 85% at -50°C in 2006. Following this, in 2007, EEL also reached a high efficiency of 76% at room temperature. However, over the next 15 years, no new efficiency records were set and these achievements have remained the pinnacle for semiconductor lasers.