A research team led by The Hong Kong University of Science and Technology (HKUST) and Tsinghua University has theoretically proposed a new mechanism of electrical 180° switching of Néel vector and experimentally realized it in antiferromagnetic materials with spin-splitting band structure featuring the C-paired spin-valley locking, also referred to as an altermagnet. The team also demonstrated the material’s capability to manipulate Néel vector, paving the way for the manufacturing of ultrafast memory devices.